It takes the average reader and 40 minutes to read CVD growth of SiC for high-power and high-frequency applications by Robin Karhu
Assuming a reading speed of 250 words per minute. Learn more
Silicon Carbide (SiC) is a wide bandgap semiconductor that has attracted a lot of interest for electronic applications due to its high thermal conductivity, high saturation electron drift velocity and high critical electric field strength. In recent years commercial SiC devices have started to make their way into high and medium voltage applications. Despite the advancements in SiC growth over the years, several issues remain. One of these issues is that the bulk grown SiC wafers are not suitable for electronic applications due to the high background doping and high density of basal plane...
CVD growth of SiC for high-power and high-frequency applications by Robin Karhu is 40 pages long, and a total of 10,000 words.
This makes it 13% the length of the average book. It also has 12% more words than the average book.
The average oral reading speed is 183 words per minute. This means it takes and 54 minutes to read CVD growth of SiC for high-power and high-frequency applications aloud.
CVD growth of SiC for high-power and high-frequency applications is suitable for students ages 8 and up.
Note that there may be other factors that effect this rating besides length that are not factored in on this page. This may include things like complex language or sensitive topics not suitable for students of certain ages.
When deciding what to show young students always use your best judgement and consult a professional.
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