How Long to Read GaN Transistor Modeling for RF and Power Electronics

How Long Does it Take to Read GaN Transistor Modeling for RF and Power Electronics?

It takes the average reader to read GaN Transistor Modeling for RF and Power Electronics by Yogesh Singh Chauhan

Assuming a reading speed of 250 words per minute. Learn more

Description

GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. Provides an overview of the operation and physics of GaN-based transistors Describes all aspects of the ASM-HEMT model for GaN circuits, which is an industry standard model, by the developers of the model Details parameter extraction of GaN devices and measurement data requirements for GaN model extraction

How long is GaN Transistor Modeling for RF and Power Electronics?

GaN Transistor Modeling for RF and Power Electronics by Yogesh Singh Chauhan is 0 pages long, and a total of 0 words.

This makes it 0% the length of the average book. It also has 0% more words than the average book.

How Long Does it Take to Read GaN Transistor Modeling for RF and Power Electronics Aloud?

The average oral reading speed is 183 words per minute. This means it takes to read GaN Transistor Modeling for RF and Power Electronics aloud.

What Reading Level is GaN Transistor Modeling for RF and Power Electronics?

GaN Transistor Modeling for RF and Power Electronics is suitable for students ages 2 and up.

Note that there may be other factors that effect this rating besides length that are not factored in on this page. This may include things like complex language or sensitive topics not suitable for students of certain ages.

When deciding what to show young students always use your best judgement and consult a professional.

Where Can I Buy GaN Transistor Modeling for RF and Power Electronics?

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