How Long to Read Hot-carrier Degradation Studies at Silicon-silicon Dioxide Interface in Short Channel MOSFETs [microform]
By Xiao Ming Li
How Long Does it Take to Read Hot-carrier Degradation Studies at Silicon-silicon Dioxide Interface in Short Channel MOSFETs [microform]?
It takes the average reader 2 hours and 53 minutes to read Hot-carrier Degradation Studies at Silicon-silicon Dioxide Interface in Short Channel MOSFETs [microform] by Xiao Ming Li
Assuming a reading speed of 250 words per minute. Learn more
Description
How long is Hot-carrier Degradation Studies at Silicon-silicon Dioxide Interface in Short Channel MOSFETs [microform]?
Hot-carrier Degradation Studies at Silicon-silicon Dioxide Interface in Short Channel MOSFETs [microform] by Xiao Ming Li is 172 pages long, and a total of 43,344 words.
This makes it 58% the length of the average book. It also has 53% more words than the average book.
How Long Does it Take to Read Hot-carrier Degradation Studies at Silicon-silicon Dioxide Interface in Short Channel MOSFETs [microform] Aloud?
The average oral reading speed is 183 words per minute. This means it takes 3 hours and 56 minutes to read Hot-carrier Degradation Studies at Silicon-silicon Dioxide Interface in Short Channel MOSFETs [microform] aloud.
What Reading Level is Hot-carrier Degradation Studies at Silicon-silicon Dioxide Interface in Short Channel MOSFETs [microform]?
Hot-carrier Degradation Studies at Silicon-silicon Dioxide Interface in Short Channel MOSFETs [microform] is suitable for students ages 10 and up.
Note that there may be other factors that effect this rating besides length that are not factored in on this page. This may include things like complex language or sensitive topics not suitable for students of certain ages.
When deciding what to show young students always use your best judgement and consult a professional.
Where Can I Buy Hot-carrier Degradation Studies at Silicon-silicon Dioxide Interface in Short Channel MOSFETs [microform]?
Hot-carrier Degradation Studies at Silicon-silicon Dioxide Interface in Short Channel MOSFETs [microform] by Xiao Ming Li is sold by several retailers and bookshops. However, Read Time works with Amazon to provide an easier way to purchase books.
To buy Hot-carrier Degradation Studies at Silicon-silicon Dioxide Interface in Short Channel MOSFETs [microform] by Xiao Ming Li on Amazon click the button below.
Buy Hot-carrier Degradation Studies at Silicon-silicon Dioxide Interface in Short Channel MOSFETs [microform] on Amazon