It takes the average reader 7 hours and 5 minutes to read Physics and Technology of Silicon Carbide Devices by Yasuto Hijikata
Assuming a reading speed of 250 words per minute. Learn more
Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
Physics and Technology of Silicon Carbide Devices by Yasuto Hijikata is 416 pages long, and a total of 106,496 words.
This makes it 140% the length of the average book. It also has 130% more words than the average book.
The average oral reading speed is 183 words per minute. This means it takes 9 hours and 41 minutes to read Physics and Technology of Silicon Carbide Devices aloud.
Physics and Technology of Silicon Carbide Devices is suitable for students ages 12 and up.
Note that there may be other factors that effect this rating besides length that are not factored in on this page. This may include things like complex language or sensitive topics not suitable for students of certain ages.
When deciding what to show young students always use your best judgement and consult a professional.
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