It takes the average reader 14 hours and 37 minutes to read Reliability Wearout Mechanisms in Advanced CMOS Technologies by Alvin W. Strong
Assuming a reading speed of 250 words per minute. Learn more
This invaluable resource tells the complete story of failure mechanisms—from basic concepts to the tools necessary to conduct reliability tests and analyze the results. Both a text and a reference work for this important area of semiconductor technology, it assumes no reliability education or experience. It also offers the first reference book with all relevant physics, equations, and step-by-step procedures for CMOS technology reliability in one place. Practical appendices provide basic experimental procedures that include experiment design, performing stressing in the laboratory, data analysis, reliability projections, and interpreting projections.
Reliability Wearout Mechanisms in Advanced CMOS Technologies by Alvin W. Strong is 864 pages long, and a total of 219,456 words.
This makes it 292% the length of the average book. It also has 268% more words than the average book.
The average oral reading speed is 183 words per minute. This means it takes 19 hours and 59 minutes to read Reliability Wearout Mechanisms in Advanced CMOS Technologies aloud.
Reliability Wearout Mechanisms in Advanced CMOS Technologies is suitable for students ages 12 and up.
Note that there may be other factors that effect this rating besides length that are not factored in on this page. This may include things like complex language or sensitive topics not suitable for students of certain ages.
When deciding what to show young students always use your best judgement and consult a professional.
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