How Long to Read SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

How Long Does it Take to Read SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices?

It takes the average reader 7 hours and 13 minutes to read SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices by John D. Cressler

Assuming a reading speed of 250 words per minute. Learn more

Description

What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

How long is SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices?

SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices by John D. Cressler is 425 pages long, and a total of 108,375 words.

This makes it 143% the length of the average book. It also has 132% more words than the average book.

How Long Does it Take to Read SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices Aloud?

The average oral reading speed is 183 words per minute. This means it takes 9 hours and 52 minutes to read SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices aloud.

What Reading Level is SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices?

SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices is suitable for students ages 12 and up.

Note that there may be other factors that effect this rating besides length that are not factored in on this page. This may include things like complex language or sensitive topics not suitable for students of certain ages.

When deciding what to show young students always use your best judgement and consult a professional.

Where Can I Buy SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices?

SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices by John D. Cressler is sold by several retailers and bookshops. However, Read Time works with Amazon to provide an easier way to purchase books.

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