How Long to Read Spin Transfer Torque Based Devices, Circuits, and Memory

How Long Does it Take to Read Spin Transfer Torque Based Devices, Circuits, and Memory?

It takes the average reader 5 hours and 5 minutes to read Spin Transfer Torque Based Devices, Circuits, and Memory by Brajesh Kumar Kaushik

Assuming a reading speed of 250 words per minute. Learn more

Description

This first-of-its-kind resource is completely dedicated to spin transfer torque (STT) based devices, circuits, and memory. A wide range of topics including, STT MRAMs, MTJ based logic circuits, simulation and modeling strategies, fabrication of MTJ CMOS circuits, non-volatile computing with STT MRAMs, all spin logic, and spin information processing are explored. State-of-the-art modeling and simulation strategies of spin transfer torque based devices and circuits in a lucid manner are covered. Professional engineers find practical guidance in the development of micro-magnetic models of spin-torque based devices in object-oriented micro-magnetic framework (OOMMF) and compact modeling of STT based magnetic tunnel junctions in Verilog-A. The performance parameters and design aspects of STT MRAMs and MTJ based hybrid spintronic CMOS circuits are covered and case studies are presented demonstrating STT-MRAM design and simulation with a detailed analysis of results. The fundamental physics of STT based devices are presented with an emphasis on new advancements from recent years. Advanced topics are also explored including, micromagnetic simulations, multi-level STT MRAMs, giant spin Hall Effect (GSHE) based MRAMs, non-volatile computing, all spin logic and all spin information processing.

How long is Spin Transfer Torque Based Devices, Circuits, and Memory?

Spin Transfer Torque Based Devices, Circuits, and Memory by Brajesh Kumar Kaushik is 297 pages long, and a total of 76,329 words.

This makes it 100% the length of the average book. It also has 93% more words than the average book.

How Long Does it Take to Read Spin Transfer Torque Based Devices, Circuits, and Memory Aloud?

The average oral reading speed is 183 words per minute. This means it takes 6 hours and 57 minutes to read Spin Transfer Torque Based Devices, Circuits, and Memory aloud.

What Reading Level is Spin Transfer Torque Based Devices, Circuits, and Memory?

Spin Transfer Torque Based Devices, Circuits, and Memory is suitable for students ages 12 and up.

Note that there may be other factors that effect this rating besides length that are not factored in on this page. This may include things like complex language or sensitive topics not suitable for students of certain ages.

When deciding what to show young students always use your best judgement and consult a professional.

Where Can I Buy Spin Transfer Torque Based Devices, Circuits, and Memory?

Spin Transfer Torque Based Devices, Circuits, and Memory by Brajesh Kumar Kaushik is sold by several retailers and bookshops. However, Read Time works with Amazon to provide an easier way to purchase books.

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