How Long to Read Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices

How Long Does it Take to Read Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices?

It takes the average reader 1 hour and 26 minutes to read Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices by Tanya Kirilova Gachovska

Assuming a reading speed of 250 words per minute. Learn more

Description

This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.

How long is Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices?

Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices by Tanya Kirilova Gachovska is 85 pages long, and a total of 21,675 words.

This makes it 29% the length of the average book. It also has 26% more words than the average book.

How Long Does it Take to Read Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices Aloud?

The average oral reading speed is 183 words per minute. This means it takes 1 hour and 58 minutes to read Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices aloud.

What Reading Level is Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices?

Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices is suitable for students ages 10 and up.

Note that there may be other factors that effect this rating besides length that are not factored in on this page. This may include things like complex language or sensitive topics not suitable for students of certain ages.

When deciding what to show young students always use your best judgement and consult a professional.

Where Can I Buy Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices?

Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices by Tanya Kirilova Gachovska is sold by several retailers and bookshops. However, Read Time works with Amazon to provide an easier way to purchase books.

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