How Long to Read Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

How Long Does it Take to Read Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor?

It takes the average reader 1 hour and 21 minutes to read Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor by Kenneth L. Holmes

Assuming a reading speed of 250 words per minute. Learn more

Description

Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT's) are microwave power devices that have the performance characteristics to improve the capabilities of current and future Navy radar and communication systems. The Office of Naval Research (ONR) is funding research for the development of GaN- based microwave power amplifiers for use in future radar and communication systems. This thesis studies the effects of AIGaN/GaN HEMTs' polarization, piezoelectric (PZ) and spontaneous, properties utilizing the TM commercially available Silvaco Atlas software for modeling and simulation. The polarization properties are suspected to enhance the two-dimensional electron gas (2DEG) at the AIGaN/GaN interface.

How long is Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor?

Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor by Kenneth L. Holmes is 79 pages long, and a total of 20,461 words.

This makes it 27% the length of the average book. It also has 25% more words than the average book.

How Long Does it Take to Read Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor Aloud?

The average oral reading speed is 183 words per minute. This means it takes 1 hour and 51 minutes to read Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor aloud.

What Reading Level is Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor?

Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor is suitable for students ages 10 and up.

Note that there may be other factors that effect this rating besides length that are not factored in on this page. This may include things like complex language or sensitive topics not suitable for students of certain ages.

When deciding what to show young students always use your best judgement and consult a professional.

Where Can I Buy Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor?

Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor by Kenneth L. Holmes is sold by several retailers and bookshops. However, Read Time works with Amazon to provide an easier way to purchase books.

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