How Long to Read Vertical GaN and SiC Power Devices

How Long Does it Take to Read Vertical GaN and SiC Power Devices?

It takes the average reader 5 hours and 17 minutes to read Vertical GaN and SiC Power Devices by Kazuhiro Mochizuki

Assuming a reading speed of 250 words per minute. Learn more

Description

This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices. Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource.

How long is Vertical GaN and SiC Power Devices?

Vertical GaN and SiC Power Devices by Kazuhiro Mochizuki is 308 pages long, and a total of 79,464 words.

This makes it 104% the length of the average book. It also has 97% more words than the average book.

How Long Does it Take to Read Vertical GaN and SiC Power Devices Aloud?

The average oral reading speed is 183 words per minute. This means it takes 7 hours and 14 minutes to read Vertical GaN and SiC Power Devices aloud.

What Reading Level is Vertical GaN and SiC Power Devices?

Vertical GaN and SiC Power Devices is suitable for students ages 12 and up.

Note that there may be other factors that effect this rating besides length that are not factored in on this page. This may include things like complex language or sensitive topics not suitable for students of certain ages.

When deciding what to show young students always use your best judgement and consult a professional.

Where Can I Buy Vertical GaN and SiC Power Devices?

Vertical GaN and SiC Power Devices by Kazuhiro Mochizuki is sold by several retailers and bookshops. However, Read Time works with Amazon to provide an easier way to purchase books.

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