It takes the average reader 3 hours and 10 minutes to read Magnetic Dynamics in Magnetic Multilayers and Spintronic Devices by Hang Chen
Assuming a reading speed of 250 words per minute. Learn more
A critical issue in spintronic devices is how to efficiently switch the magnetization of a nanomagnet. The switching is typically occurred at ferromagnetic resonant frequency. One of the very desired features is to enhance the resonant frequency so as to increase the switching speed. In this thesis. we use optical mode in coupled FM bilayers to significantly enhance the resonance frequency because the ferromagnetic exchange coupling is much stronger compared with other effective field introduced by, for example, strain or anisotropy. we theoretically and experimentally study the resonant frequency in Co90Fe10/Ta/(Ni80Fe20)18́2xCux trilayer. we also validate the theoretical model with experimental results and use the theoretical model to further design heterostructures with desired properties such as enhanced intensity in OM. All of our experimental results are fully explained by our model which also allows us to identify the coupling mechanism as Neel "orange-peel" coupling and extract the interlayer coupling strength. In current magnetic random access memories (MRAMs), the magnetization is switched via spin transfer torques (STT) or spin orbit torques (SOTs). In this thesis, we use a time-resolved (TR) Magneto-optic Kerr effect (TRMOKE) to investigate the SOT-induced magnetization dynamics in Py/Pt and Ta/CoFeB heterostructures. We have answered three questions as we set to explore: (1) the field-like torque determines initial oscillation magnitude and the damping-like torque determines the final steady position; (2) both the effect field of damping-like toque hDL and field-like torque hFL can be extracted from the TRMOKE spectrum, and (3) the ratio hDL/ hFL measured from dynamics are the same as those measured at low frequency. Finally, we also explore the way of using voltage to switch the magnetization in order to significantly reduce the energy consumption. We employed an antiferromagnetic Cr2O3 film with net a net magnetization at the film surface. The surface magnetization can be isothermally switched via applied electric field (voltage), enabling "writing" function in the memory cell. We solved various challenges in developing the final device including (1) exchange coupling between the surface magnetization and the magnetization in a ferromagnetic heterostructure of Co/Pd multilayer, (2) the exchange coupling between Co/Pd and CoFeB which has perpendicular magnetization and serves as a bottom electrode of magnetic tunnel junction for readout. (3) the leakage issue of Cr2O3, (4) the contact to middle layer that is less than 5 nm thick, and (5) device layout and detailed fabrication steps. Although we did not have time to fully demonstrate the devices, all key steps have been well resolved.
Magnetic Dynamics in Magnetic Multilayers and Spintronic Devices by Hang Chen is 190 pages long, and a total of 47,500 words.
This makes it 64% the length of the average book. It also has 58% more words than the average book.
The average oral reading speed is 183 words per minute. This means it takes 4 hours and 19 minutes to read Magnetic Dynamics in Magnetic Multilayers and Spintronic Devices aloud.
Magnetic Dynamics in Magnetic Multilayers and Spintronic Devices is suitable for students ages 10 and up.
Note that there may be other factors that effect this rating besides length that are not factored in on this page. This may include things like complex language or sensitive topics not suitable for students of certain ages.
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