How Long to Read The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
By Zhiqiang Li
How Long Does it Take to Read The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices?
It takes the average reader 1 hour and 1 minute to read The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices by Zhiqiang Li
Assuming a reading speed of 250 words per minute. Learn more
Description
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600°C and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
How long is The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices?
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices by Zhiqiang Li is 59 pages long, and a total of 15,281 words.
This makes it 20% the length of the average book. It also has 19% more words than the average book.
How Long Does it Take to Read The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices Aloud?
The average oral reading speed is 183 words per minute. This means it takes 1 hour and 23 minutes to read The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices aloud.
What Reading Level is The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices?
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices is suitable for students ages 8 and up.
Note that there may be other factors that effect this rating besides length that are not factored in on this page. This may include things like complex language or sensitive topics not suitable for students of certain ages.
When deciding what to show young students always use your best judgement and consult a professional.
Where Can I Buy The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices?
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices by Zhiqiang Li is sold by several retailers and bookshops. However, Read Time works with Amazon to provide an easier way to purchase books.
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